Optimizing the Band Alignment of the MZO/CdSeTe/CdTe Solar Cell by Varying the Substrate Temperature of MZO Film

Qiuchen Wu, Ruchun Li, Yufeng Zhang, Kai Huang, Heran Li and Xiangxin Liu ()
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Qiuchen Wu: Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
Ruchun Li: Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
Yufeng Zhang: Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
Kai Huang: Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
Heran Li: Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
Xiangxin Liu: Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China

Energies, 2024, vol. 17, issue 3, 1-11

Abstract: Cadmium telluride (CdTe) photovoltaics is a promising and scalable technology, commanding over 90% of the thin film photovoltaics market. An appropriate window layer is crucial for high-efficiency CdTe solar cells. This study aimed to investigate a representative MgZnO (MZO) window layer and enhance device performance. We studied the properties of MZO films with different substrate temperatures and their application in CdSeTe/CdTe solar cells. Despite the high transmittance and wide band gap of MZO film, the device performance of MZO sputtered at room temperature is limited by excessive conduction band offset. Tailoring the substrate temperature for MZO sputtering helps optimize the band alignment of the MZO/CdSeTe interface, contributing to an improvement in the efficiency of CdTe solar cells.

Keywords: MZO film; CdTe solar cell; band alignment (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
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