The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er 3+ -Doped Ga 2 O 3 Thin Films

Yuanlin Liang, Haisheng Chen, Dianmeng Dong, Jiaxing Guo, Xiaona Du, Taiyu Bian, Fan Zhang, Zhenping Wu () and Yang Zhang ()
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Yuanlin Liang: Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Haisheng Chen: Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Dianmeng Dong: State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Jiaxing Guo: Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Xiaona Du: Institute of Photoelectric Thin Film Devices and Technology, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
Taiyu Bian: Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
Fan Zhang: State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Zhenping Wu: State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Yang Zhang: Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China

Energies, 2024, vol. 17, issue 6, 1-10

Abstract: Gallium oxide (Ga 2 O 3 ) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga 2 O 3 still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature-grown amorphous Ga 2 O 3 demonstrates comparable performance with its crystalline counterparts. Lanthanide Er 3+ -doped Ga 2 O 3 (Ga 2 O 3 : Er) possesses great potential for developing light-emitting devices, photodetectors, solid-state lasers, and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here, we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga 2 O 3 : Er thin films. Through controlling the growth temperature of Ga 2 O 3 : Er films, the upconversion luminescence of crystalline Ga 2 O 3 : Er thin film is strongly enhanced over 100 times that of the amorphous Ga 2 O 3 : Er thin film. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga 2 O 3 : Er thin films. These results will aid further designs of favorable optoelectronic devices integrated with lanthanide-doped Ga 2 O 3 thin films.

Keywords: amorphous-to-crystalline transition; upconversion luminescence; wide bandgap semiconductor; thin films; lanthanide doped phosphors (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2024
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