Characterization of Zno:Al Nanolayers Produced by ALD for Clean Energy Applications

Marek Szindler (), Magdalena Szindler, Krzysztof Matus, Błażej Tomiczek () and Barbara Hajduk
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Marek Szindler: Scientific and Didactic Laboratory of Nanotechnology and Material Technologies, Faculty of Mechanical Engineering, Silesian University of Technology, Konarskiego 18a, Str., 44-100 Gliwice, Poland
Magdalena Szindler: Department of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18a, Str., 44-100 Gliwice, Poland
Krzysztof Matus: Materials Research Laboratory, Silesian University of Technology, Konarskiego 18a St., 44-100 Gliwice, Poland
Błażej Tomiczek: Scientific and Didactic Laboratory of Nanotechnology and Material Technologies, Faculty of Mechanical Engineering, Silesian University of Technology, Konarskiego 18a, Str., 44-100 Gliwice, Poland
Barbara Hajduk: Centre of Polymer and Carbon Materials, Polish Academy of Sciences, 34 Marie Curie-Skłodowska Str., 41-819 Zabrze, Poland

Energies, 2025, vol. 18, issue 11, 1-15

Abstract: The rising demand for sustainable energy solutions has spurred the development of advanced materials for photovoltaic devices. Among these, transparent conductive oxides (TCOs) play a pivotal role in enhancing device efficiency, particularly in silicon-based solar cells. However, the reliance on indium-based TCOs like ITO raises concerns over cost and material scarcity, prompting the search for more abundant and scalable alternatives. This study focuses on the fabrication and characterization of aluminum-doped zinc oxide (ZnO:Al, AZO) thin films deposited via Atomic Layer Deposition (ALD), targeting their application as transparent conductive oxides in silicon solar cells. The ZnO:Al thin films were synthesized by alternating supercycles of ZnO and Al 2 O 3 depositions at 225 °C, allowing precise control of composition and thickness. Structural, optical, and electrical properties were assessed using Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), Raman spectroscopy, spectroscopic ellipsometry, and four-point probe measurements. The results confirmed the formation of uniform, crack-free ZnO:Al thin films with a spinel-type ZnAl 2 O 4 crystalline structure. Optical analyses revealed high transparency (more than 80%) and tunable refractive indices (1.64 ÷ 1.74); the energy band gap was 2.6 ÷ 3.07 eV, while electrical measurements demonstrated low sheet resistance values, reaching 85 Ω/□ for thicker films. This combination of optical and electrical properties underscores the potential of ALD-grown AZO thin films to meet the stringent demands of next-generation photovoltaics. Integration of Zn:Al thin films into silicon solar cells led to an optimized photovoltaic performance, with the best cell achieving a short-circuit current density of 36.0 mA/cm 2 and a power conversion efficiency of 15.3%. Overall, this work highlights the technological relevance of ZnO:Al thin films as a sustainable and cost-effective alternative to conventional TCOs, offering pathways toward more accessible and efficient solar energy solutions.

Keywords: photovoltaics; solar cells; thin films; TCO; AZO (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2025
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