Reliability Challenges, Models, and Physics of Silicon Carbide and Gallium Nitride Power Devices

Tsuriel Avraham, Mamta Dhyani and Joseph B. Bernstein ()
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Tsuriel Avraham: Department of Electrical and Electronic Engineering, Ariel University, Ariel 40700, Israel
Mamta Dhyani: Department of Electrical and Electronic Engineering, Ariel University, Ariel 40700, Israel
Joseph B. Bernstein: Department of Electrical and Electronic Engineering, Ariel University, Ariel 40700, Israel

Energies, 2025, vol. 18, issue 5, 1-30

Abstract: Silicon Carbide (SiC) and Gallium Nitride (GaN) are revolutionizing power electronics with greater efficiency and durability than Silicon. Nevertheless, their widespread use is limited by reliability challenges, including thermal degradation, defect propagation, and charge trapping, affecting their stability and lifetime. This review explores these reliability issues, comparing empirical and physics-based models for predicting device performance and identifying practical limitations. We also examine strategies to enhance robustness, from material design improvements to advanced testing methods. We propose a demonstrative GaN power circuit topology specifically for demonstrating reliability in real-world conditions. This work highlights key challenges and opportunities in developing more reliable SiC and GaN technologies for future applications.

Keywords: wide bandgap semiconductors; reliability; power devices; physics of failure (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2025
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