Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode

Wanqiang Fu, Qizhen Chen (), Peng Gao, Linqin Jiang, Yu Qiu, Dong-Sing Wuu, Ray-Hua Horng and Shui-Yang Lien ()
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Wanqiang Fu: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Qizhen Chen: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Peng Gao: CAS Key Laboratory of Design a Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
Linqin Jiang: Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China
Yu Qiu: Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China
Dong-Sing Wuu: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan
Ray-Hua Horng: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Shui-Yang Lien: Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China

Energies, 2025, vol. 18, issue 9, 1-11

Abstract: The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (V th ) of 0.16 V, a subthreshold swing ( SS ) of 0.20 V/decade, and an on/off current ratio (I on /I off ) of 4.90 × 10 5 . Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering.

Keywords: MXene; IGZO; vertical channel TFT; porous source electrode; flexible devices (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2025
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