Silicon Heterojunction Solar Cells Using AlO x and Plasma-Immersion Ion Implantation

Yu-Hsien Lin, Yung-Chun Wu, Hsin-Chiang You, Chun-Hao Chen, Ping-Hua Chen, Yi-He Tsai, Yi-Yun Yang and K. S. Chang-Liao
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Yu-Hsien Lin: Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan
Yung-Chun Wu: Department of Engineering and System Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan
Hsin-Chiang You: Department of Electronic Engineering, National Chin-Yi University of Technology, No. 57, Sec. 2, Zhongshan Rd., Taiping Dist., Taichung 41170, Taiwan
Chun-Hao Chen: Department of Engineering and System Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan
Ping-Hua Chen: Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan
Yi-He Tsai: Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan
Yi-Yun Yang: Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan
K. S. Chang-Liao: Department of Engineering and System Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan

Energies, 2014, vol. 7, issue 6, 1-11

Abstract: Aluminum oxide (AlO x ) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlO x ) was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled implanting nitrogen into the device to reduce dangling bonds and achieve the desired passivation effect. Depositing AlO x on the surface of a solar cell increased the short-circuit current density ( J sc ); open-circuit voltage ( V oc ); and conversion efficiency from 27.84 mA/cm 2 ; 0.52 V; and 8.97% to 29.34 mA/cm 2 ; 0.54 V; and 9.68%; respectively. After controlling the depth and concentration of nitrogen by modulating the PIII energy; the ideal PIII condition was determined to be 2 keV and 10 min. As a result; a 15.42% conversion efficiency was thus achieved; and the J sc ; V oc ; and fill factor were 37.78 mA/cm 2 ; 0.55 V; and 0.742; respectively.

Keywords: plasma-immersion ion implantation; silicon heterojunction; solar cell (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2014
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