Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Tsunenobu Kimoto, Kyosuke Yamada, Hiroki Niwa and Jun Suda
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Tsunenobu Kimoto: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan
Kyosuke Yamada: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan
Hiroki Niwa: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan
Jun Suda: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615 8510, Japan

Energies, 2016, vol. 9, issue 11, 1-15

Abstract: Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

Keywords: silicon carbide; power device; carrier lifetime; conductivity modulation; (merged pin-Schottky) diodes (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2016
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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