Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

Mitsuoki Hishida, Takeyuki Sekimoto, Mitsuhiro Matsumoto and Akira Terakawa
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Mitsuoki Hishida: Automotive & Industrial Systems Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan
Takeyuki Sekimoto: Advanced Research Division, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
Mitsuhiro Matsumoto: Eco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, Japan
Akira Terakawa: Eco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, Japan

Energies, 2016, vol. 9, issue 1, 1-11

Abstract: Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (?c-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity ( X c ) of ?c-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.

Keywords: thin-film silicon tandem solar cell; microcrystalline silicon; amorphous silicon; crystallinity; plasma-enhanced chemical vapor deposition; conversion efficiency (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2016
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