A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control

Ming Ren, Chongxing Zhang, Ming Dong, Rixin Ye and Ricardo Albarracín
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Ming Ren: State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
Chongxing Zhang: State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
Ming Dong: State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
Rixin Ye: State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
Ricardo Albarracín: Department of Electrical, Electronics and Automation Engineering and Applied Physics, Polytechnic University of Madrid, Ronda de Valencia 3, Madrid 28012, Spain

Energies, 2016, vol. 9, issue 8, 1-15

Abstract: To make the switching impulse (SI) generator more compact, portable and feasible in field tests, a new approach based on transformer boosting was developed. To address problems such as triggering synchronization and electromagnetic interference involved with the traditional spark gap, an insulated gate bipolar transistor (IGBT) module with drive circuit was employed as the impulse trigger. An optimization design for the component parameters of the primary winding side of the transformer was realized by numerical calculation and error correction. Experiment showed that the waveform parameters of SI and oscillating switching impulse (OSI) voltages generated by the new generator were consistent with the numerical calculation and the error correction. The generator was finally built on a removable high voltage transformer with small size. Thus the volume of the generator is significantly reduced. Experiments showed that the waveform parameters of SI and OSI voltages generated by the new generator were basically consistent with the numerical calculation and the error correction.

Keywords: impulse generator; switching impulse (SI); insulated gate bipolar transistor (IGBT); boosting transformer; impulse waveform parameters (search for similar items in EconPapers)
JEL-codes: Q Q0 Q4 Q40 Q41 Q42 Q43 Q47 Q48 Q49 (search for similar items in EconPapers)
Date: 2016
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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