Channel Engineering for Nanotransistors in a Semiempirical Quantum Transport Model

Ulrich Wulf, Jan Kučera, Hans Richter, Manfred Horstmann, Maciej Wiatr and Jan Höntschel
Additional contact information
Ulrich Wulf: Department of Physics, Brandenburgische Technische Universität Cottbus/Senftenberg, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
Jan Kučera: Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovanická 10, 162 53 Praha 6, Czech Republic
Hans Richter: Department of Physics, Brandenburgische Technische Universität Cottbus/Senftenberg, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany
Manfred Horstmann: Globalfoundries Dresden, Wilschdorfer Landstraße 101, 01109 Dresden, Germany
Maciej Wiatr: Globalfoundries Dresden, Wilschdorfer Landstraße 101, 01109 Dresden, Germany
Jan Höntschel: Globalfoundries Dresden, Wilschdorfer Landstraße 101, 01109 Dresden, Germany

Mathematics, 2017, vol. 5, issue 4, 1-17

Abstract: One major concern of channel engineering in nanotransistors is the coupling of the conduction channel to the source/drain contacts. In a number of previous publications, we have developed a semiempirical quantum model in quantitative agreement with three series of experimental transistors. On the basis of this model, an overlap parameter 0 ? C ? 1 can be defined as a criterion for the quality of the contact-to-channel coupling: A high level of C means good matching between the wave functions in the source/drain and in the conduction channel associated with a low contact-to-channel reflection. We show that a high level of C leads to a high saturation current in the ON-state and a large slope of the transfer characteristic in the OFF-state. Furthermore, relevant for future device miniaturization, we analyze the contribution of the tunneling current to the total drain current. It is seen for a device with a gate length of 26 nm that for all gate voltages, the share of the tunneling current becomes small for small drain voltages. With increasing drain voltage, the contribution of the tunneling current grows considerably showing Fowler–Nordheim oscillations. In the ON-state, the classically allowed current remains dominant for large drain voltages. In the OFF-state, the tunneling current becomes dominant.

Keywords: nanotransistor; channel engineering; quantum transport; contact-to-channel coupling; wave function overlap; tunneling current (search for similar items in EconPapers)
JEL-codes: C (search for similar items in EconPapers)
Date: 2017
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.mdpi.com/2227-7390/5/4/68/pdf (application/pdf)
https://www.mdpi.com/2227-7390/5/4/68/ (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:gam:jmathe:v:5:y:2017:i:4:p:68-:d:119963

Access Statistics for this article

Mathematics is currently edited by Ms. Emma He

More articles in Mathematics from MDPI
Bibliographic data for series maintained by MDPI Indexing Manager ().