Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model

Ahmed E. Abouelregal, Marin Marin and Sameh Askar
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Ahmed E. Abouelregal: Department of Mathematics, Faculty of Science, Mansoura University, Mansoura 35516, Egypt
Marin Marin: Department of Mathematics and Computer Science, Transilvania University of Brasov, 500093 Brasov, Romania
Sameh Askar: Department of Statistics and Operations Research, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia

Mathematics, 2021, vol. 9, issue 22, 1-20

Abstract: The current study investigates thermophotovoltaic interactions using a new mathematical model of thermoelasticity established on a modification of the Green–Naghdi model of type III (GN-III). The basic equations, in which the heat transfer is in the form of the Moore–Gibson–Thompson (MGT) equation, are derived by adding a single delay factor to the GN-III model. The impact of temperature and electrical elastic displacement of semiconductors throughout the excited thermoelectric mechanism can be studied theoretically using this model. The proposed model was used to investigate the interactions between the processes of thermoelastic plasma in a rotating semiconductor solid sphere that was subjected to a thermal shock and crossed to an externally applied magnetic field. The influence of rotation parameters on various photothermal characteristics of silicon solid was presented and explored using the Laplace technique.

Keywords: thermophotovoltaic; semiconductors; GN-III model; carrier lifetime; rotation (search for similar items in EconPapers)
JEL-codes: C (search for similar items in EconPapers)
Date: 2021
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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