A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories

Juan E. Ruiz-Castro, Christian Acal, Ana M. Aguilera and Juan B. Roldán
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Juan E. Ruiz-Castro: Department of Statistics and O.R. and Math Institute, University of Granada, 18071 Granada, Spain
Christian Acal: Department of Statistics and O.R. and Math Institute, University of Granada, 18071 Granada, Spain
Ana M. Aguilera: Department of Statistics and O.R. and Math Institute, University of Granada, 18071 Granada, Spain
Juan B. Roldán: Department of Electronics and Computing Technology, University of Granada, 18071 Granada, Spain

Mathematics, 2021, vol. 9, issue 4, 1-16

Abstract: A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time. The stationary distribution was calculated through matrix-algorithmic methods and multiple interesting measures were worked out. The number of visits distribution to a determine macro-state were analyzed from the respective differential equations and the Laplace transform. The mean number of visits to a macro-state between any two times was given. The results were implemented computationally and were successfully applied to study random telegraph noise (RTN) in resistive memories. RTN is an important concern in resistive random access memory (RRAM) operation. On one hand, it could limit some of the technological applications of these devices; on the other hand, RTN can be used for the physical characterization. Therefore, an in-depth statistical analysis to model the behavior of these devices is of essential importance.

Keywords: phase-type distributions; Markov processes; RRAM; random telegraph noise; statistics (search for similar items in EconPapers)
JEL-codes: C (search for similar items in EconPapers)
Date: 2021
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (3)

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