Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

Ji Yeon Hyun, Soohyun Bae, Yoon Chung Nam, Dongkyun Kang, Sang-Won Lee, Donghwan Kim, Jooyoung Park, Yoonmook Kang and Hae-Seok Lee
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Ji Yeon Hyun: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Soohyun Bae: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Yoon Chung Nam: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Dongkyun Kang: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Sang-Won Lee: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Donghwan Kim: Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Jooyoung Park: KU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Yoonmook Kang: KU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
Hae-Seok Lee: KU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea

Sustainability, 2019, vol. 11, issue 14, 1-7

Abstract: Al 2 O 3 /SiN x stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiN x film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al 2 O 3 /SiN x stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al 2 O 3 structure using electron energy-loss spectroscopy.

Keywords: surface passivation; hydrogenation; silicon solar cells; aluminum oxide; field-effect passivation; chemical passivation (search for similar items in EconPapers)
JEL-codes: O13 Q Q0 Q2 Q3 Q5 Q56 (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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