Influence/Effect of Deep-Level Defect of Absorber Layer and n/i Interface on the Performance of Antimony Triselenide Solar Cells by Numerical Simulation

Dong Le Khac, Shahariar Chowdhury, Montri Luengchavanon, Mohammad Shah Jamal, Amel Laref, Kuaanan Techato, Suwat Sreesawet, Sittiporn Channumsin and Chin Hua Chia
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Dong Le Khac: Faculty of Environmental Management, Prince of Songkla University, Songkhla 90110, Thailand
Shahariar Chowdhury: Faculty of Environmental Management, Prince of Songkla University, Songkhla 90110, Thailand
Montri Luengchavanon: Sustainable Energy Management Program, Wind Energy and Energy Storage Centre (WEESYC), Faculty of Environmental Management, Prince of Songkla University, Songkhla 90110, Thailand
Mohammad Shah Jamal: Institute of Fuel Research and Development (IFRD), BCSIR, Dhaka 1205, Bangladesh
Amel Laref: Physics Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
Kuaanan Techato: Faculty of Environmental Management, Prince of Songkla University, Songkhla 90110, Thailand
Suwat Sreesawet: Space Technology Research Centre, Geo-Informatics and Space Technology Development Agency (GISTDA), Chonburi 20230, Thailand
Sittiporn Channumsin: Space Technology Research Centre, Geo-Informatics and Space Technology Development Agency (GISTDA), Chonburi 20230, Thailand
Chin Hua Chia: Materials Science Program, Department of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, Bangi 43600, Malaysia

Sustainability, 2022, vol. 14, issue 11, 1-11

Abstract: The antimony sulphide (AnS) solar cell is a relatively new photovoltaic technology. Because of its attractive material, optical, and electrical qualities, Sb2Se3 is an excellent absorption layer in solar cells, with a conversion efficiency of less than 8%. The purpose of this research is to determine the best parameter for increasing solar cell efficiency. This research focused on the influence of absorber layer defect density and the n/i interface on the performance of antimony trisulfide solar cells. The researchers designed the absorber thickness values with the help of the SCAPS-1D (Solar Cell Capacitance Simulator-1D) simulation programme. For this purpose, they designed the ZnS/Sb 2 Se 3 /PEDOT: PSS planar p-i-n structure, and then simulated its performance. This result confirms a Power Conversion Efficiency (PCE) of ≥25% at an absorber layer thickness of >300 nm and a defect density of 10 14 cm −3 , which were within the acceptable range. In this experiment, the researchers hypothesised that the antimony triselenide conduction band possessed a typical energy of ≈0.1 eV and an energetic defect level of ≈0.6 eV. At the n/i interface, every condition generated a similar result. However, the researchers noted a few limitations regarding the relationship between the defect mechanism and the device performance.

Keywords: antimony triselenide; solar cell simulation; SCAPS-1D; defect density; interface defect (search for similar items in EconPapers)
JEL-codes: O13 Q Q0 Q2 Q3 Q5 Q56 (search for similar items in EconPapers)
Date: 2022
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