Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device
Laura Vauche (),
Gabin Guillemaud,
Joao-Carlos Lopes Barbosa and
Léa Di Cioccio
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Laura Vauche: CEA, LETI, University Grenoble Alpes, F-38000 Grenoble, France
Gabin Guillemaud: CEA, LETI, University Grenoble Alpes, F-38000 Grenoble, France
Joao-Carlos Lopes Barbosa: CEA, LETI, University Grenoble Alpes, F-38000 Grenoble, France
Léa Di Cioccio: CEA, LETI, University Grenoble Alpes, F-38000 Grenoble, France
Sustainability, 2024, vol. 16, issue 2, 1-18
Abstract:
Wide Band Gap (WBG) semiconductors have the potential to provide significant improvements in energy efficiency over conventional silicon (Si) semiconductors. While the potential for energy efficiency gains is widely researched, the relation to the energy and resource use during manufacturing processes remains insufficiently studied. In order to appraise the performance of the technology thoroughly, issues such as raw material scarcity, toxicity and environmental impacts need to be investigated in detail. However, sparse Life Cycle Assessment (LCA) data are available for the two currently most widespread WBG semiconductor materials, gallium nitride (GaN or GaN/Si) and silicon carbide (SiC). This paper, for the first time, presents a cradle-to-gate life cycle assessment for a GaN/Si power device. To allow for a full range of indicators, life cycle assessment method EF 3.1 was used to analyze the results. The results identify environmental hotspots associated with different materials and processes: electricity consumption for the processes and clean room facilities, direct emissions of greenhouse gases, gold (when used), and volatile organic chemicals. Finally, we compare this result with publicly available data for Si, GaN and SiC power devices.
Keywords: GaN; power devices; environmental impact assessment; cradle-to-gate; life cycle assessment (search for similar items in EconPapers)
JEL-codes: O13 Q Q0 Q2 Q3 Q5 Q56 (search for similar items in EconPapers)
Date: 2024
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Citations: View citations in EconPapers (1)
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Persistent link: https://EconPapers.repec.org/RePEc:gam:jsusta:v:16:y:2024:i:2:p:901-:d:1323207
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