Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films

Hsiu-Chuan Wei

Mathematical Problems in Engineering, 2011, vol. 2011, 1-13

Abstract:

Electroless deposition for fabricating copper (Cu) interconnects of integrated circuits has drawn attention due to its low processing temperature, high deposition selectivity, and high coverage. In this paper, three-dimensional computer simulations of the qualitative growth properties of Cu particles and two-dimensional simulations of the trench-filling properties are conducted. The mathematical model employed in the study is a reaction-diffusion equation. An implicit finite difference discretization with a red-black Gauss-Seidel method as a solver is proposed for solving the reaction-diffusion equation. The simulated deposition properties agree with those observed in experimentation. Alternatives to improve the deposition properties are also discussed.

Date: 2011
References: Add references at CitEc
Citations:

Downloads: (external link)
http://downloads.hindawi.com/journals/MPE/2011/528351.pdf (application/pdf)
http://downloads.hindawi.com/journals/MPE/2011/528351.xml (text/xml)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:hin:jnlmpe:528351

DOI: 10.1155/2011/528351

Access Statistics for this article

More articles in Mathematical Problems in Engineering from Hindawi
Bibliographic data for series maintained by Mohamed Abdelhakeem ().