Anomaly Detection and Degradation Prediction of MOSFET
Li-Feng Wu,
Yong Guan,
Xiao-Juan Li and
Jie Ma
Mathematical Problems in Engineering, 2015, vol. 2015, 1-5
Abstract:
The MOSFET is an important power electronic transistor widely used in electrical systems. Its reliability has an effect on the performance of systems. In this paper, the failure models and mechanisms of MOSFETs are briefly analyzed. The on-resistance is the key failure precursor parameter representing the degree of degradation. Based on the experimental data, a nonlinear dual-exponential degradation model for MOSFETs is obtained. Then, we present an approach for MOSFET degradation state prediction using a strong tract filter based on the obtained degradation model. Lastly, the proposed algorithm is shown to perform effectively on experimental data. Thus, it can provide early warning and enhance the reliability of electrical systems.
Date: 2015
References: Add references at CitEc
Citations:
Downloads: (external link)
http://downloads.hindawi.com/journals/MPE/2015/573980.pdf (application/pdf)
http://downloads.hindawi.com/journals/MPE/2015/573980.xml (text/xml)
Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.
Export reference: BibTeX
RIS (EndNote, ProCite, RefMan)
HTML/Text
Persistent link: https://EconPapers.repec.org/RePEc:hin:jnlmpe:573980
DOI: 10.1155/2015/573980
Access Statistics for this article
More articles in Mathematical Problems in Engineering from Hindawi
Bibliographic data for series maintained by Mohamed Abdelhakeem ().