Design and Fabrication of Nanostructures Silicon Photodiode

Alwan M. Alwan and Allaa A.Jabbar

Modern Applied Science, 2011, vol. 5, issue 1, 106

Abstract: A highly sensitive (metal/nanostructure silicon /metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes,Of nanostructures porous silicon prepared by laser assisted etching . Photoresponse was investigated in the wavelength rang of (400-850nm) . A responsivity of (3A/w) was measured at (450 nm) with low value of dark current of about ( 1 µA /cm2 ) at 5 volt reverse bias.

Date: 2011
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