Near-zero computing using NCFET for IoT applications

Kishore Sanapala, S.V.V. Satyanarayana and R. Sakthivel

International Journal of Intelligent Enterprise, 2021, vol. 8, issue 2/3, 288-295

Abstract: The energy consumption of the devices or circuits built on the IoT's is becoming a significant concern with the complementary metal oxide semiconductor (CMOS) technology scaling. To reduce energy consumption, supply voltage (V_DD) scaling has proved to be an effective technique with near-threshold/subthreshold computations depicting the endpoint of voltage scaling. This paper discusses how the near-zero computing (NZC) is achieved by scaling the V_DD beyond the subthreshold regime using the negative capacitance FET (NCFET) to enable IoT with beyond CMOS features. After characterising the NCFET for near zero operation, the basic computational circuits: logic gates and 1-bitfull adder circuit are designed and simulated using NCFET at near-zero V_DD of 0.1 V. In comparison with the CMOS counterparts, the NCFET logic designs have achieved significant improvements and is found that the NCFET logic results in more than 54%, 68%, 85%, and 95% savings in power, delay, energy, and EDP respectively.

Keywords: complementary metal oxide semiconductor; CMOS; energy; internet of thing; IoT; NCFET; near-zero computing; NZC. (search for similar items in EconPapers)
Date: 2021
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