Fabrication of pin diodes using direct-bonded silicon wafers

Iqbal K. Bansal and Mark Surgent

International Journal of Manufacturing Technology and Management, 2005, vol. 7, issue 5/6, 553-565

Abstract: Direct wafer bonding is an operation of ultra-fine alignment, joining and thermal bonding of two silicon wafers. The silicon wafers are chemically cleaned in order to minimise surface contamination. The wafer surface is either 'hydrophilic' or 'hydrophobic'. The 'hydrophobic' surface is achieved using an in-situ oxide etching process. The joining step is performed in a Class 100 or better environment by employing a semi-automatic joiner. Then, thermal bonding operation is carried out at elevated temperatures. Detailed product yield data are presented. The application of silicon-direct wafer bonded substrates provides a quantum jump in the device electrical performance of PIN diodes.

Keywords: direct wafer bonding; hydrophilic; hydrophobic; light point defects; voids; pin diodes; silicon wafers; semiconductor manufacturing; oxide etching; joining; thermal bonding; ultra-fine alignment; electrical performance; MEMS; microelectromechanical systems. (search for similar items in EconPapers)
Date: 2005
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