Spin-optoelectronic devices based on hybrid organic-inorganic trihalide perovskites

Jingying Wang, Chuang Zhang, Haoliang Liu, Ryan McLaughlin, Yaxin Zhai, Shai R. Vardeny, Xiaojie Liu, Stephen McGill, Dmitry Semenov, Hangwen Guo, Ryuichi Tsuchikawa, Vikram V. Deshpande, Dali Sun () and Z. Valy Vardeny ()
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Jingying Wang: University of Utah
Chuang Zhang: University of Utah
Haoliang Liu: University of Utah
Ryan McLaughlin: University of Utah
Yaxin Zhai: University of Utah
Shai R. Vardeny: University of Arizona
Xiaojie Liu: University of Utah
Stephen McGill: National High Magnetic Field Laboratory
Dmitry Semenov: National High Magnetic Field Laboratory
Hangwen Guo: Louisiana State University
Ryuichi Tsuchikawa: University of Utah
Vikram V. Deshpande: University of Utah
Dali Sun: University of Utah
Z. Valy Vardeny: University of Utah

Nature Communications, 2019, vol. 10, issue 1, 1-6

Abstract: Abstract Recently the hybrid organic-inorganic trihalide perovskites have shown remarkable performance as active layers in photovoltaic and other optoelectronic devices. However, their spin characteristic properties have not been fully studied, although due to the relatively large spin-orbit coupling these materials may show great promise for spintronic applications. Here we demonstrate spin-polarized carrier injection into methylammonium lead bromide films from metallic ferromagnetic electrodes in two spintronic-based devices: a ‘spin light emitting diode’ that results in circularly polarized electroluminescence emission; and a ‘vertical spin valve’ that shows giant magnetoresistance. In addition, we also apply a magnetic field perpendicular to the injected spins orientation for measuring the ‘Hanle effect’, from which we obtain a relatively long spin lifetime for the electrically injected carriers. Our measurements initiate the field of hybrid perovskites spin-related optoelectronic applications.

Date: 2019
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DOI: 10.1038/s41467-018-07952-x

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