Higher order effects in organic LEDs with sub-bandgap turn-on

Sebastian Engmann (), Adam J. Barito, Emily G. Bittle, Noel C. Giebink, Lee J. Richter and David J. Gundlach ()
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Sebastian Engmann: Theiss Research
Adam J. Barito: National Institute of Standards and Technology
Emily G. Bittle: National Institute of Standards and Technology
Noel C. Giebink: The Pennsylvania State University, Electrical Engineering West
Lee J. Richter: National Institute of Standards and Technology
David J. Gundlach: National Institute of Standards and Technology

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract Spin-dependent nonlinear processes in organic materials such as singlet-fission and triplet-triplet annihilation could increase the performance for photovoltaics, detectors, and light emitting diodes. Rubrene/C60 light emitting diodes exhibit a distinct low voltage (half-bandgap) threshold for emission. Two origins for the low voltage turn-on have been proposed: (i) Auger assisted energy up-conversion, and (ii) triplet-triplet annihilation. We test these proposals by systematically altering the rubrene/C60 interface kinetics by introducing thin interlayers. Quantitative analysis of the unmodified rubrene/C60 device suggests that higher order processes can be ruled out as the origin of the sub-bandgap turn-on. Rather, band-to-band recombination is the most likely radiative recombination process. However, insertion of a bathocuproine layer yields a 3-fold increase in luminance compared to the unmodified device. This indicates that suppression of parasitic interface processes by judicious modification of the interface allows a triplet-triplet annihilation channel to be observed.

Date: 2019
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DOI: 10.1038/s41467-018-08075-z

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