Strong-correlation induced high-mobility electrons in Dirac semimetal of perovskite oxide

J. Fujioka (), R. Yamada, M. Kawamura, S. Sakai, M. Hirayama, R. Arita, T. Okawa, D. Hashizume, M. Hoshino and Y. Tokura ()
Additional contact information
J. Fujioka: University of Tokyo
R. Yamada: University of Tokyo
M. Kawamura: RIKEN Center for Emergent Matter Science (CEMS)
S. Sakai: RIKEN Center for Emergent Matter Science (CEMS)
M. Hirayama: RIKEN Center for Emergent Matter Science (CEMS)
R. Arita: University of Tokyo
T. Okawa: University of Tokyo
D. Hashizume: RIKEN Center for Emergent Matter Science (CEMS)
M. Hoshino: Japan Science and Technology Agency
Y. Tokura: University of Tokyo

Nature Communications, 2019, vol. 10, issue 1, 1-6

Abstract: Abstract Electrons in conventional metals become less mobile under the influence of electron correlation. Contrary to this empirical knowledge, we report here that electrons with the highest mobility ever found in known bulk oxide semiconductors emerge in the strong-correlation regime of the Dirac semimetal of perovskite CaIrO3. The transport measurements reveal that the high mobility exceeding 60,000 cm2V−1s−1 originates from the proximity of the Fermi energy to the Dirac node (ΔE

Date: 2019
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DOI: 10.1038/s41467-018-08149-y

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