Negative longitudinal magnetoresistance in gallium arsenide quantum wells

Jing Xu, Meng K. Ma, Maksim Sultanov, Zhi-Li Xiao (), Yong-Lei Wang (), Dafei Jin, Yang-Yang Lyu, Wei Zhang (), Loren N. Pfeiffer, Ken W. West, Kirk W. Baldwin, Mansour Shayegan and Wai-Kwong Kwok
Additional contact information
Jing Xu: Materials Science Division
Meng K. Ma: Princeton University
Maksim Sultanov: Northern Illinois University
Zhi-Li Xiao: Materials Science Division
Yong-Lei Wang: Materials Science Division
Dafei Jin: Center for Nanoscale Materials
Yang-Yang Lyu: Materials Science Division
Wei Zhang: Materials Science Division
Loren N. Pfeiffer: Princeton University
Ken W. West: Princeton University
Kirk W. Baldwin: Princeton University
Mansour Shayegan: Princeton University
Wai-Kwong Kwok: Materials Science Division

Nature Communications, 2019, vol. 10, issue 1, 1-7

Abstract: Abstract Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.

Date: 2019
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DOI: 10.1038/s41467-018-08199-2

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