Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Gwangwoo Kim, Sung-Soo Kim, Jonghyuk Jeon, Seong In Yoon, Seokmo Hong, Young Jin Cho, Abhishek Misra, Servet Ozdemir, Jun Yin, Davit Ghazaryan, Matthew Holwill, Artem Mishchenko, Daria V. Andreeva, Yong-Jin Kim, Hu Young Jeong, A-Rang Jang, Hyun-Jong Chung, Andre K. Geim, Kostya S. Novoselov (), Byeong-Hyeok Sohn () and Hyeon Suk Shin ()
Additional contact information
Gwangwoo Kim: Ulsan National Institute of Science & Technology (UNIST)
Sung-Soo Kim: Seoul National University
Jonghyuk Jeon: Seoul National University
Seong In Yoon: Ulsan National Institute of Science & Technology (UNIST)
Seokmo Hong: UNIST
Young Jin Cho: Konkuk University
Abhishek Misra: University of Manchester
Servet Ozdemir: University of Manchester
Jun Yin: University of Manchester
Davit Ghazaryan: University of Manchester
Matthew Holwill: University of Manchester
Artem Mishchenko: University of Manchester
Daria V. Andreeva: National University of Singapore
Yong-Jin Kim: Institute of Basic Science (IBS)
Hu Young Jeong: UNIST Central Research Facilities (UCRF), UNIST
A-Rang Jang: Ulsan National Institute of Science & Technology (UNIST)
Hyun-Jong Chung: Konkuk University
Andre K. Geim: University of Manchester
Kostya S. Novoselov: University of Manchester
Byeong-Hyeok Sohn: Seoul National University
Hyeon Suk Shin: Ulsan National Institute of Science & Technology (UNIST)

Nature Communications, 2019, vol. 10, issue 1, 1-9

Abstract: Abstract Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.

Date: 2019
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DOI: 10.1038/s41467-018-08227-1

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