Strain engineering in perovskite solar cells and its impacts on carrier dynamics
Cheng Zhu,
Xiuxiu Niu,
Yuhao Fu,
Nengxu Li,
Chen Hu,
Yihua Chen,
Xin He,
Guangren Na,
Pengfei Liu,
Huachao Zai,
Yang Ge,
Yue Lu,
Xiaoxing Ke,
Yang Bai,
Shihe Yang,
Pengwan Chen,
Yujing Li,
Manling Sui,
Lijun Zhang (),
Huanping Zhou () and
Qi Chen ()
Additional contact information
Cheng Zhu: Beijing Institute of Technology
Xiuxiu Niu: Beijing Institute of Technology
Yuhao Fu: Jilin University
Nengxu Li: Peking University
Chen Hu: The Hong Kong University of Science and Technology, Clear Water Bay
Yihua Chen: Peking University
Xin He: Jilin University
Guangren Na: Jilin University
Pengfei Liu: Beijing Institute of Technology
Huachao Zai: China University of Petroleum
Yang Ge: Beijing University of Technology
Yue Lu: Beijing University of Technology
Xiaoxing Ke: Beijing University of Technology
Yang Bai: Beijing Institute of Technology
Shihe Yang: The Hong Kong University of Science and Technology, Clear Water Bay
Pengwan Chen: Beijing Institute of Technology
Yujing Li: Beijing Institute of Technology
Manling Sui: Beijing University of Technology
Lijun Zhang: Jilin University
Huanping Zhou: Peking University
Qi Chen: Beijing Institute of Technology
Nature Communications, 2019, vol. 10, issue 1, 1-11
Abstract:
Abstract The mixed halide perovskites have emerged as outstanding light absorbers for efficient solar cells. Unfortunately, it reveals inhomogeneity in these polycrystalline films due to composition separation, which leads to local lattice mismatches and emergent residual strains consequently. Thus far, the understanding of these residual strains and their effects on photovoltaic device performance is absent. Herein we study the evolution of residual strain over the films by depth-dependent grazing incident X-ray diffraction measurements. We identify the gradient distribution of in-plane strain component perpendicular to the substrate. Moreover, we reveal its impacts on the carrier dynamics over corresponding solar cells, which is stemmed from the strain induced energy bands bending of the perovskite absorber as indicated by first-principles calculations. Eventually, we modulate the status of residual strains in a controllable manner, which leads to enhanced PCEs up to 20.7% (certified) in devices via rational strain engineering.
Date: 2019
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-08507-4
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DOI: 10.1038/s41467-019-08507-4
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