Tuning the Fröhlich exciton-phonon scattering in monolayer MoS2

Bastian Miller, Jessica Lindlau, Max Bommert, Andre Neumann, Hisato Yamaguchi, Alexander Holleitner, Alexander Högele and Ursula Wurstbauer ()
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Bastian Miller: Technical University of Munich
Jessica Lindlau: Nanosystems Initiative Munich (NIM)
Max Bommert: Technical University of Munich
Andre Neumann: Nanosystems Initiative Munich (NIM)
Hisato Yamaguchi: Los Alamos National Laboratory (LANL)
Alexander Holleitner: Technical University of Munich
Alexander Högele: Nanosystems Initiative Munich (NIM)
Ursula Wurstbauer: Technical University of Munich

Nature Communications, 2019, vol. 10, issue 1, 1-6

Abstract: Abstract Charge carriers in semiconducting transition metal dichalcogenides possess a valley degree of freedom that allows for optoelectronic applications based on the momentum of excitons. At elevated temperatures, scattering by phonons limits valley polarization, making a detailed knowledge about strength and nature of the interaction of excitons with phonons essential. In this work, we directly access exciton-phonon coupling in charge tunable single layer MoS2 devices by polarization resolved Raman spectroscopy. We observe a strong defect mediated coupling between the long-range oscillating electric field induced by the longitudinal optical phonon in the dipolar medium and the exciton. This so-called Fröhlich exciton phonon interaction is suppressed by doping. The suppression correlates with a distinct increase of the degree of valley polarization up to 20% even at elevated temperatures of 220 K. Our result demonstrates a promising strategy to increase the degree of valley polarization towards room temperature valleytronic applications.

Date: 2019
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DOI: 10.1038/s41467-019-08764-3

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