Fundamental aspects to localize self-catalyzed III-V nanowires on silicon

J. Vukajlovic-Plestina, W. Kim, L. Ghisalberti, G. Varnavides, G. Tütüncuoglu, H. Potts, M. Friedl, L. Güniat, W. C. Carter, V. G. Dubrovskii and A. Fontcuberta i Morral ()
Additional contact information
J. Vukajlovic-Plestina: EPFL
W. Kim: EPFL
L. Ghisalberti: EPFL
G. Varnavides: MIT
G. Tütüncuoglu: EPFL
H. Potts: EPFL
M. Friedl: EPFL
L. Güniat: EPFL
W. C. Carter: EPFL
V. G. Dubrovskii: ITMO University
A. Fontcuberta i Morral: EPFL

Nature Communications, 2019, vol. 10, issue 1, 1-7

Abstract: Abstract III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is necessary. Here, we propose a mechanism which gives a clear route for maximizing the nanowire yield in the self-catalyzed growth fashion. It is widely accepted that growth of nanowires occurs on a layer-by-layer basis, starting at the triple-phase line. Contrary to common understanding, we find that vertical growth of nanowires starts at the oxide-substrate line interface, forming a ring-like structure several layers thick. This is granted by optimizing the diameter/height aspect ratio and cylindrical symmetry of holes, which impacts the diffusion flux of the group V element through the well-positioned group III droplet. This work provides clear grounds for realistic integration of III-Vs on silicon and for the organized growth of nanowires in other material systems.

Date: 2019
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DOI: 10.1038/s41467-019-08807-9

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