Paraffin-enabled graphene transfer

Wei Sun Leong, Haozhe Wang, Jingjie Yeo, Francisco J. Martin-Martinez, Ahmad Zubair, Pin-Chun Shen, Yunwei Mao, Tomas Palacios, Markus J. Buehler, Jin-Yong Hong () and Jing Kong ()
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Wei Sun Leong: Massachusetts Institute of Technology
Haozhe Wang: Massachusetts Institute of Technology
Jingjie Yeo: Tufts University
Francisco J. Martin-Martinez: Massachusetts Institute of Technology
Ahmad Zubair: Massachusetts Institute of Technology
Pin-Chun Shen: Massachusetts Institute of Technology
Yunwei Mao: Massachusetts Institute of Technology
Tomas Palacios: Massachusetts Institute of Technology
Markus J. Buehler: Massachusetts Institute of Technology
Jin-Yong Hong: Massachusetts Institute of Technology
Jing Kong: Massachusetts Institute of Technology

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm2 V−1 s−1; electron mobility = 7438 cm2 V−1 s−1), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.

Date: 2019
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DOI: 10.1038/s41467-019-08813-x

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