High performance planar germanium-on-silicon single-photon avalanche diode detectors

Peter Vines (), Kateryna Kuzmenko, Jarosław Kirdoda, Derek C. S. Dumas, Muhammad M. Mirza, Ross W. Millar, Douglas J. Paul and Gerald S. Buller ()
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Peter Vines: Heriot-Watt University
Kateryna Kuzmenko: Heriot-Watt University
Jarosław Kirdoda: University of Glasgow
Derek C. S. Dumas: University of Glasgow
Muhammad M. Mirza: University of Glasgow
Ross W. Millar: University of Glasgow
Douglas J. Paul: University of Glasgow
Gerald S. Buller: Heriot-Watt University

Nature Communications, 2019, vol. 10, issue 1, 1-9

Abstract: Abstract Single-photon detection has emerged as a method of choice for ultra-sensitive measurements of picosecond optical transients. In the short-wave infrared, semiconductor-based single-photon detectors typically exhibit relatively poor performance compared with all-silicon devices operating at shorter wavelengths. Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared operation. This planar geometry has enabled a significant step-change in performance, demonstrating single-photon detection efficiency of 38% at 125 K at a wavelength of 1310 nm, and a fifty-fold improvement in noise equivalent power compared with optimised mesa geometry SPADs. In comparison with InGaAs/InP devices, Ge-on-Si SPADs exhibit considerably reduced afterpulsing effects. These results, utilising the inexpensive Ge-on-Si platform, provide a route towards large arrays of efficient, high data rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and future quantum technology applications.

Date: 2019
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DOI: 10.1038/s41467-019-08830-w

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