Composition change-driven texturing and doping in solution-processed SnSe thermoelectric thin films

Seung Hwae Heo, Seungki Jo, Hyo Seok Kim, Garam Choi, Jae Yong Song, Jun-Yun Kang, No-Jin Park, Hyeong Woo Ban, Fredrick Kim, Hyewon Jeong, Jaemin Jung, Jaeyoung Jang, Won Bo Lee, Hosun Shin () and Jae Sung Son ()
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Seung Hwae Heo: Ulsan National Institute of Science and Technology (UNIST)
Seungki Jo: Ulsan National Institute of Science and Technology (UNIST)
Hyo Seok Kim: Institute of Chemical Processes, Seoul National University
Garam Choi: Institute of Chemical Processes, Seoul National University
Jae Yong Song: Korea Research Institute of Standards & Science (KRISS)
Jun-Yun Kang: Korea Institute of Materials Science
No-Jin Park: Kumoh National Institute of Technology
Hyeong Woo Ban: Ulsan National Institute of Science and Technology (UNIST)
Fredrick Kim: Ulsan National Institute of Science and Technology (UNIST)
Hyewon Jeong: Ulsan National Institute of Science and Technology (UNIST)
Jaemin Jung: Hanyang University
Jaeyoung Jang: Hanyang University
Won Bo Lee: Institute of Chemical Processes, Seoul National University
Hosun Shin: Korea Research Institute of Standards & Science (KRISS)
Jae Sung Son: Ulsan National Institute of Science and Technology (UNIST)

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract The discovery of SnSe single crystals with record high thermoelectric efficiency along the b-axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe2 phase. We show that the strong textures of the thin films in the b–c plane originate from the transition of two dimensional SnSe2 to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm−1 K−2.

Date: 2019
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DOI: 10.1038/s41467-019-08883-x

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