Reversible defect engineering in graphene grain boundaries

Krishna Balasubramanian, Tathagatha Biswas, Priyadarshini Ghosh, Swathi Suran, Abhishek Mishra, Rohan Mishra, Ritesh Sachan, Manish Jain, Manoj Varma, Rudra Pratap and Srinivasan Raghavan ()
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Krishna Balasubramanian: Indian Institute of Science
Tathagatha Biswas: Indian Institute of Science
Priyadarshini Ghosh: Indian Institute of Science
Swathi Suran: Indian Institute of Science
Abhishek Mishra: Indian Institute of Science
Rohan Mishra: Washington University in St. Louis
Ritesh Sachan: Oak Ridge National Laboratory
Manish Jain: Indian Institute of Science
Manoj Varma: Indian Institute of Science
Rudra Pratap: Indian Institute of Science
Srinivasan Raghavan: Indian Institute of Science

Nature Communications, 2019, vol. 10, issue 1, 1-9

Abstract: Abstract Research efforts in large area graphene synthesis have been focused on increasing grain size. Here, it is shown that, beyond 1 μm grain size, grain boundary engineering determines the electronic properties of the monolayer. It is established by chemical vapor deposition experiments and first-principle calculations that there is a thermodynamic correlation between the vapor phase chemistry and carbon potential at grain boundaries and triple junctions. As a result, boundary formation can be controlled, and well-formed boundaries can be intentionally made defective, reversibly. In 100 µm long channels this aspect is demonstrated by reversibly changing room temperature electronic mobilities from 1000 to 20,000 cm2 V−1 s−1. Water permeation experiments show that changes are localized to grain boundaries. Electron microscopy is further used to correlate the global vapor phase conditions and the boundary defect types. Such thermodynamic control is essential to enable consistent growth and control of two-dimensional layer properties over large areas.

Date: 2019
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DOI: 10.1038/s41467-019-09000-8

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