Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Donghua Liu, Xiaosong Chen, Yaping Yan, Zhongwei Zhang, Zhepeng Jin, Kongyang Yi, Cong Zhang, Yujie Zheng, Yao Wang, Jun Yang, Xiangfan Xu (), Jie Chen, Yunhao Lu, Dapeng Wei (), Andrew Thye Shen Wee and Dacheng Wei ()
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Donghua Liu: Fudan University
Xiaosong Chen: Fudan University
Yaping Yan: Tongji University
Zhongwei Zhang: Tongji University
Zhepeng Jin: Fudan University
Kongyang Yi: Fudan University
Cong Zhang: Fudan University
Yujie Zheng: National University of Singapore
Yao Wang: Zhejiang University
Jun Yang: Chinese Academy of Sciences
Xiangfan Xu: Tongji University
Jie Chen: Tongji University
Yunhao Lu: Zhejiang University
Dapeng Wei: Chinese Academy of Sciences
Andrew Thye Shen Wee: National University of Singapore
Dacheng Wei: Fudan University

Nature Communications, 2019, vol. 10, issue 1, 1-11

Abstract: Abstract Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe2) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO2/Si, quartz, sapphire, silicon or SiO2/Si with three-dimensional patterns at 300 °C. Owing to the atomically-clean van-der-Walls conformal interface and the fact that 2D-BN can better bridge the vibrational spectrum across the interface and protect interfacial heat conduction against substrate roughness, both improved performance and thermal dissipation of WSe2 field-effect transistor are realized with mobility around 56~ 121 cm2 V−1 s−1 and saturated power intensity up to 4.23 × 103 W cm−2. Owing to its simplicity, conformal growth on three-dimensional surface, compatibility with microelectronic process, it has potential for application in future two-dimensional electronics.

Date: 2019
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DOI: 10.1038/s41467-019-09016-0

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