Memory phototransistors based on exponential-association photoelectric conversion law

Zhibin Shao, Tianhao Jiang, Xiujuan Zhang, Xiaohong Zhang (), Xiaofeng Wu, Feifei Xia, Shiyun Xiong, Shuit-Tong Lee () and Jiansheng Jie ()
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Zhibin Shao: Soochow University
Tianhao Jiang: Soochow University
Xiujuan Zhang: Soochow University
Xiaohong Zhang: Soochow University
Xiaofeng Wu: Soochow University
Feifei Xia: Jiangsu University of Technology
Shiyun Xiong: Soochow University
Shuit-Tong Lee: Soochow University
Jiansheng Jie: Soochow University

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage and bulky size. Herein, we develop a memory phototransistor for ultraweak light detection, by exploiting the charge-storage accumulative effect in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the memory phototransistors exhibit ultrahigh responsivity of 3.8 × 109 A W−1 and detectivity of 7.7 × 1022 Jones. As a result, the memory phototransistors are able to detect ultraweak light of 6 nW cm−2 with an extremely high sensitivity of 4 × 107. The proposed memory phototransistors offer a design concept for ultraweak light sensing devices.

Date: 2019
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DOI: 10.1038/s41467-019-09206-w

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