Radiation tolerance of two-dimensional material-based devices for space applications

Tobias Vogl (), Kabilan Sripathy, Ankur Sharma, Prithvi Reddy, James Sullivan, Joshua R. Machacek, Linglong Zhang, Fouad Karouta, Ben C. Buchler, Marcus W. Doherty, Yuerui Lu and Ping Koy Lam ()
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Tobias Vogl: The Australian National University
Kabilan Sripathy: The Australian National University
Ankur Sharma: The Australian National University
Prithvi Reddy: The Australian National University
James Sullivan: The Australian National University
Joshua R. Machacek: The Australian National University
Linglong Zhang: The Australian National University
Fouad Karouta: The Australian National University
Ben C. Buchler: The Australian National University
Marcus W. Doherty: The Australian National University
Yuerui Lu: The Australian National University
Ping Koy Lam: The Australian National University

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract Characteristic for devices based on two-dimensional materials are their low size, weight and power requirements. This makes them advantageous for use in space instrumentation, including photovoltaics, batteries, electronics, sensors and light sources for long-distance quantum communication. Here we present a comprehensive study on combined radiation effects in Earth’s atmosphere on various devices based on these nanomaterials. Using theoretical modeling packages, we estimate relevant radiation levels and then expose field-effect transistors, single-photon sources and monolayers as building blocks for future electronics to γ-rays, protons and electrons. The devices show negligible change in performance after the irradiation, suggesting robust suitability for space use. Under excessive γ-radiation, however, monolayer WS2 shows decreased defect densities, identified by an increase in photoluminescence, carrier lifetime and a change in doping ratio proportional to the photon flux. The underlying mechanism is traced back to radiation-induced defect healing, wherein dissociated oxygen passivates sulfur vacancies.

Date: 2019
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DOI: 10.1038/s41467-019-09219-5

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