Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

Dapan Li, Changyong Lan, Arumugam Manikandan, SenPo Yip, Ziyao Zhou, Xiaoguang Liang, Lei Shu, Yu-Lun Chueh, Ning Han () and Johnny C. Ho ()
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Dapan Li: City University of Hong Kong
Changyong Lan: City University of Hong Kong
Arumugam Manikandan: National Tsing Hua University
SenPo Yip: City University of Hong Kong
Ziyao Zhou: City University of Hong Kong
Xiaoguang Liang: City University of Hong Kong
Lei Shu: City University of Hong Kong
Yu-Lun Chueh: National Tsing Hua University
Ning Han: Chinese Academy of Sciences
Johnny C. Ho: City University of Hong Kong

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 -orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.

Date: 2019
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DOI: 10.1038/s41467-019-09606-y

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