Laser restructuring and photoluminescence of glass-clad GaSb/Si-core optical fibres

S. Song, K. Lønsethagen, F. Laurell, T. W. Hawkins, J. Ballato, M. Fokine and U. J. Gibson ()
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S. Song: Norwegian University of Science and Technology
K. Lønsethagen: Norwegian University of Science and Technology
F. Laurell: KTH Royal Institute of Technology
T. W. Hawkins: Clemson University
J. Ballato: Clemson University
M. Fokine: KTH Royal Institute of Technology
U. J. Gibson: Norwegian University of Science and Technology

Nature Communications, 2019, vol. 10, issue 1, 1-7

Abstract: Abstract Semiconductor-core optical fibres have potential applications in photonics and optoelectronics due to large nonlinear optical coefficients and an extended transparency window. Laser processing can impose large temperature gradients, an ability that has been used to improve the uniformity of unary fibre cores, and to inscribe compositional variations in alloy systems. Interest in an integrated light-emitting element suggests a move from Group IV to III-V materials, or a core that contains both. This paper describes the fabrication of GaSb/Si core fibres, and a subsequent CO2 laser treatment that aggregates large regions of GaSb without suppressing room temperature photoluminescence. The ability to isolate a large III-V crystalline region within the Si core is an important step towards embedding semiconductor light sources within infrared light-transmitting silicon optical fibre.

Date: 2019
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DOI: 10.1038/s41467-019-09835-1

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