ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Lynn Lee, Jeongwoon Hwang, Jin Won Jung, Jongchan Kim, Ho-In Lee, Sunwoo Heo, Minho Yoon, Sungju Choi, Nguyen Long, Jinseon Park, Jae Won Jeong, Jiyoung Kim, Kyung Rok Kim, Dae Hwan Kim, Seongil Im, Byoung Hun Lee, Kyeongjae Cho () and Myung Mo Sung ()
Additional contact information
Lynn Lee: Hanyang University
Jeongwoon Hwang: University of Texas at Dallas
Jin Won Jung: Hanyang University
Jongchan Kim: Hanyang University
Ho-In Lee: Gwangju Institute of Science and Technology
Sunwoo Heo: Gwangju Institute of Science and Technology
Minho Yoon: Yonsei University
Sungju Choi: Kookmin University
Nguyen Long: Hanyang University
Jinseon Park: Hanyang University
Jae Won Jeong: Ulsan National Institute of Science and Technology
Jiyoung Kim: University of Texas at Dallas
Kyung Rok Kim: Ulsan National Institute of Science and Technology
Dae Hwan Kim: Kookmin University
Seongil Im: Yonsei University
Byoung Hun Lee: Gwangju Institute of Science and Technology
Kyeongjae Cho: University of Texas at Dallas
Myung Mo Sung: Hanyang University

Nature Communications, 2019, vol. 10, issue 1, 1-9

Abstract: Abstract A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate states. A composite nanolayer with zinc oxide quantum dots embedded in amorphous zinc oxide domains generated quantized conducting states at the mobility edge, which we refer to as “mobility edge quantization”. The unique quantized conducting state effectively restricted the occupied number of carriers due to its low density of states, which enable current saturation. Multi-value logic transistors were realized by applying a hybrid superlattice consisting of zinc oxide composite nanolayers and organic barriers as channels in the transistor. The superlattice channels produced multiple states due to current saturation of the quantized conducting state in the composite nanolayers. Our multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with no current fluctuation, and adjustable multi-level states.

Date: 2019
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DOI: 10.1038/s41467-019-09998-x

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