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Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy

Qiushi Huang, Qi Jia, Jiangtao Feng, Hao Huang, Xiaowei Yang, Joerg Grenzer, Kai Huang, Shibing Zhang, Jiajie Lin, Hongyan Zhou, Tiangui You, Wenjie Yu, Stefan Facsko, Philippe Jonnard, Meiyi Wu, Angelo Giglia, Zhong Zhang, Zhi Liu, Zhanshan Wang, Xi Wang and Xin Ou ()
Additional contact information
Qiushi Huang: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Qi Jia: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Jiangtao Feng: Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University
Hao Huang: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Xiaowei Yang: Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University
Joerg Grenzer: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400
Kai Huang: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Shibing Zhang: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Jiajie Lin: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Hongyan Zhou: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Tiangui You: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Wenjie Yu: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Stefan Facsko: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400
Philippe Jonnard: Sorbonne Université, Faculté des Sciences et Ingénierie, UMR CNRS, Laboratoire de Chimie Physique – Matière et Rayonnement, boîte courrier 1140
Meiyi Wu: Sorbonne Université, Faculté des Sciences et Ingénierie, UMR CNRS, Laboratoire de Chimie Physique – Matière et Rayonnement, boîte courrier 1140
Angelo Giglia: CNR Istituto Officina Materiali
Zhong Zhang: Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University
Zhi Liu: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Zhanshan Wang: Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University
Xi Wang: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Xin Ou: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

Nature Communications, 2019, vol. 10, issue 1, 1-9

Abstract: Abstract Gratings, one of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems. The grating period is the key parameter that limits the dispersion and resolution of the system. With the rapid development of large X-ray science facilities, gratings with periodicities below 50 nm are in urgent need for the development of ultrahigh-resolution X-ray spectroscopy. However, the wafer-scale fabrication of nanogratings through conventional patterning methods is difficult. Herein, we report a maskless and high-throughput method to generate wafer-scale, multilayer gratings with period in the sub-50 nm range. They are fabricated by a vacancy epitaxy process and coated with X-ray multilayers, which demonstrate extremely large angular dispersion at approximately 90 eV and 270 eV. The developed new method has great potential to produce ultrahigh line density multilayer gratings that can pave the way to cutting edge high-resolution spectroscopy and other X-ray applications.

Date: 2019
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DOI: 10.1038/s41467-019-10095-2

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