Gate tunable giant anisotropic resistance in ultra-thin GaTe

Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang (), Huaihong Guo, Chengbing Qin (), Liantuan Xiao, Jing Zhang, Jianhao Chen (), Zheng Han () and Zhidong Zhang
Additional contact information
Hanwen Wang: Chinese Academy of Sciences
Mao-Lin Chen: Chinese Academy of Sciences
Mengjian Zhu: National University of Defense Technology
Yaning Wang: Chinese Academy of Sciences
Baojuan Dong: Chinese Academy of Sciences
Xingdan Sun: Chinese Academy of Sciences
Xiaorong Zhang: Shanxi University
Shimin Cao: Peking University
Xiaoxi Li: Chinese Academy of Sciences
Jianqi Huang: Chinese Academy of Sciences
Lei Zhang: Chinese Academy of Sciences
Weilai Liu: Chinese Academy of Sciences
Dongming Sun: Chinese Academy of Sciences
Yu Ye: Collaborative Innovation Center of Quantum Matter
Kepeng Song: King Abdullah University of Science and Technology
Jianjian Wang: Chongqing University
Yu Han: King Abdullah University of Science and Technology
Teng Yang: Chinese Academy of Sciences
Huaihong Guo: Liaoning Shihua University
Chengbing Qin: Shanxi University
Liantuan Xiao: Shanxi University
Jing Zhang: Shanxi University
Jianhao Chen: Peking University
Zheng Han: Chinese Academy of Sciences
Zhidong Zhang: Chinese Academy of Sciences

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract Anisotropy in crystals arises from different lattice periodicity along different crystallographic directions, and is usually more pronounced in two dimensional (2D) materials. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the recent research focuses. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity anisotropy between x and y directions of the 2D crystal can be gate tuned from several fold to over 103. This effect is further demonstrated to yield an anisotropic non-volatile memory behavior in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate-tunable giant anisotropic resistance effect pave the way for potential applications in nanoelectronics such as multifunctional directional memories in the 2D limit.

Date: 2019
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DOI: 10.1038/s41467-019-10256-3

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