Scaling growth rates for perovskite oxide virtual substrates on silicon

Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov and Roman Engel-Herbert ()
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Jason Lapano: Pennsylvania State University
Matthew Brahlek: Pennsylvania State University
Lei Zhang: University of California
Joseph Roth: Pennsylvania State University
Alexej Pogrebnyakov: Pennsylvania State University
Roman Engel-Herbert: Pennsylvania State University

Nature Communications, 2019, vol. 10, issue 1, 1-7

Abstract: Abstract The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

Date: 2019
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DOI: 10.1038/s41467-019-10273-2

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