Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4

Haowen Wang, Chengliang Lu (), Jun Chen, Yong Liu, S. L. Yuan, Sang-Wook Cheong, Shuai Dong () and Jun-Ming Liu
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Haowen Wang: Huazhong University of Science and Technology
Chengliang Lu: Huazhong University of Science and Technology
Jun Chen: Southeast University
Yong Liu: Wuhan University
S. L. Yuan: Huazhong University of Science and Technology
Sang-Wook Cheong: Rutgers University
Shuai Dong: Southeast University
Jun-Ming Liu: Nanjing University

Nature Communications, 2019, vol. 10, issue 1, 1-7

Abstract: Abstract Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has been realized by various means, applicably appreciated functionalities on the readout side of AFM-based devices are urgently desired. Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) as giant as ~160% in a simple resistor structure made of AFM Sr2IrO4 without auxiliary reference layer. The underlying mechanism for the giant AMR is an indispensable combination of atomic scale giant-MR-like effect and magnetocrystalline anisotropy energy, which was not accessed earlier. Furthermore, we demonstrate the bistable nonvolatile memory states that can be switched in-situ without the inconvenient heat-assisted procedure, and robustly preserved even at zero magnetic field, due to the modified interlayer coupling by 1% Ga-doping in Sr2IrO4. These findings represent a straightforward step toward the AFM spintronic devices.

Date: 2019
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DOI: 10.1038/s41467-019-10299-6

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