Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects

Hocheon Yoo, Hongkeun Park, Seunghyun Yoo, Sungmin On, Hyejeong Seong, Sung Gap Im () and Jae-Joon Kim ()
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Hocheon Yoo: Pohang University of Science and Technology (POSTECH)
Hongkeun Park: Korea Advanced Institute of Science and Technology (KAIST)
Seunghyun Yoo: Pohang University of Science and Technology (POSTECH)
Sungmin On: Pohang University of Science and Technology (POSTECH)
Hyejeong Seong: Imperial College London
Sung Gap Im: Korea Advanced Institute of Science and Technology (KAIST)
Jae-Joon Kim: Pohang University of Science and Technology (POSTECH)

Nature Communications, 2019, vol. 10, issue 1, 1-9

Abstract: Abstract Multilevel metal interconnects are crucial for the development of large-scale organic integrated circuits. In particular, three-dimensional integrated circuits require a large number of vertical interconnects between layers. Here, we present a novel multilevel metal interconnect scheme that involves solvent-free patterning of insulator layers to form an interconnecting area that ensures a reliable electrical connection between two metals in different layers. Using a highly reliable interconnect method, the highest stacked organic transistors to date, a three-dimensional organic integrated circuits consisting of 5 transistors and 20 metal layers, is successfully fabricated in a solvent-free manner. All transistors exhibit outstanding device characteristics, including a high on/off current ratio of ~107, no hysteresis behavior, and excellent device-to-device uniformity. We also demonstrate two vertically-stacked complementary inverter circuits that use transistors on 4 different floors. All circuits show superb inverter characteristics with a 100% output voltage swing and gain up to 35 V per V.

Date: 2019
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DOI: 10.1038/s41467-019-10412-9

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