Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Harald Schneider, Manfred Helm and Emmanouil Dimakis ()
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Leila Balaghi: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Genziana Bussone: PETRA III, Deutsches Elektronen-Synchrotron (DESY)
Raphael Grifone: PETRA III, Deutsches Elektronen-Synchrotron (DESY)
René Hübner: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Jörg Grenzer: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Mahdi Ghorbani-Asl: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Arkady V. Krasheninnikov: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Harald Schneider: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Manfred Helm: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Emmanouil Dimakis: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.

Date: 2019
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DOI: 10.1038/s41467-019-10654-7

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