Interlayer epitaxy of wafer-scale high-quality uniform AB-stacked bilayer graphene films on liquid Pt3Si/solid Pt

Wei Ma, Mao-Lin Chen, Lichang Yin, Zhibo Liu, Hui Li, Chuan Xu, Xing Xin, Dong-Ming Sun, Hui-Ming Cheng and Wencai Ren ()
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Wei Ma: Chinese Academy of Sciences
Mao-Lin Chen: Chinese Academy of Sciences
Lichang Yin: Chinese Academy of Sciences
Zhibo Liu: Chinese Academy of Sciences
Hui Li: Chinese Academy of Sciences
Chuan Xu: Chinese Academy of Sciences
Xing Xin: Chinese Academy of Sciences
Dong-Ming Sun: Chinese Academy of Sciences
Hui-Ming Cheng: Chinese Academy of Sciences
Wencai Ren: Chinese Academy of Sciences

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract Large-area high-quality AB-stacked bilayer graphene films are highly desired for the applications in electronics, photonics and spintronics. However, the existing growth methods can only produce discontinuous bilayer graphene with variable stacking orders because of the non-uniform surface and strong potential field of the solid substrates used. Here we report the growth of wafer-scale continuous uniform AB-stacked bilayer graphene films on a liquid Pt3Si/solid Pt substrate by chemical vapor deposition. The films show quality, mechanical and electrical properties comparable to the mechanically exfoliated samples. Growth mechanism studies show that the second layer is grown underneath the first layer by precipitation of carbon atoms from the solid Pt, and the small energy requirements for the movements of graphene nucleus on the liquid Pt3Si enables the interlayer epitaxy to form energy-favorable AB stacking. This interlayer epitaxy also allows the growth of ABA-stacked trilayer graphene and is applicable to other liquid/solid substrates.

Date: 2019
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DOI: 10.1038/s41467-019-10691-2

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