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Van der Waals negative capacitance transistors

Xiaowei Wang, Peng Yu (), Zhendong Lei, Chao Zhu, Xun Cao, Fucai Liu, Lu You, Qingsheng Zeng, Ya Deng, Chao Zhu, Jiadong Zhou, Qundong Fu, Junling Wang, Yizhong Huang and Zheng Liu ()
Additional contact information
Xiaowei Wang: Nanyang Technological University
Peng Yu: Nanyang Technological University
Zhendong Lei: National University of Singapore
Chao Zhu: Nanyang Technological University
Xun Cao: Nanyang Technological University
Fucai Liu: Nanyang Technological University
Lu You: Nanyang Technological University
Qingsheng Zeng: Nanyang Technological University
Ya Deng: Nanyang Technological University
Chao Zhu: Nanyang Technological University
Jiadong Zhou: Nanyang Technological University
Qundong Fu: Nanyang Technological University
Junling Wang: Nanyang Technological University
Yizhong Huang: Nanyang Technological University
Zheng Liu: Nanyang Technological University

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide and CuInP2S6 (CIPS) van der Waals (vdW) heterostructure. The vdW NC-FET provides an average subthreshold swing (SS) less than the Boltzmann’s limit for over seven decades of drain current, with a minimum SS of 28 mV dec−1. Negligible hysteresis is achieved in NC-FETs with the thickness of CIPS less than 20 nm. A voltage gain of 24 is measured for vdW NC-FET logic inverter. Flexible vdW NC-FET is further demonstrated with sub-60 mV dec−1 switching characteristics under the bending radius down to 3.8 mm. These results demonstrate the great potential of vdW NC-FET for ultra-low-power and flexible applications.

Date: 2019
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DOI: 10.1038/s41467-019-10738-4

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