Low voltage control of exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure

V. L. Korenev (), I. V. Kalitukha, I. A. Akimov (), V. F. Sapega, E. A. Zhukov, E. Kirstein, O. S. Ken, D. Kudlacik, G. Karczewski, M. Wiater, T. Wojtowicz, N. D. Ilyinskaya, N. M. Lebedeva, T. A. Komissarova, Yu. G. Kusrayev, D. R. Yakovlev and M. Bayer
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V. L. Korenev: Russian Academy of Sciences
I. V. Kalitukha: Russian Academy of Sciences
I. A. Akimov: Russian Academy of Sciences
V. F. Sapega: Russian Academy of Sciences
E. A. Zhukov: Russian Academy of Sciences
E. Kirstein: Technische Universität Dortmund
O. S. Ken: Russian Academy of Sciences
D. Kudlacik: Technische Universität Dortmund
G. Karczewski: Polish Academy of Sciences
M. Wiater: Institute of Physics, Polish Academy of Sciences
T. Wojtowicz: Institute of Physics, Polish Academy of Sciences
N. D. Ilyinskaya: Russian Academy of Sciences
N. M. Lebedeva: Russian Academy of Sciences
T. A. Komissarova: Russian Academy of Sciences
Yu. G. Kusrayev: Russian Academy of Sciences
D. R. Yakovlev: Russian Academy of Sciences
M. Bayer: Russian Academy of Sciences

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices with low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here, we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The electric field controls the phononic ac Stark effect—the indirect exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1V bias across the heterostructure.

Date: 2019
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DOI: 10.1038/s41467-019-10774-0

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