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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

A. Crippa (), R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand () and S. Franceschi
Additional contact information
A. Crippa: University of Grenoble Alpes
R. Ezzouch: University of Grenoble Alpes
A. Aprá: University of Grenoble Alpes
A. Amisse: University of Grenoble Alpes
R. Laviéville: CEA, LETI, Minatec Campus
L. Hutin: CEA, LETI, Minatec Campus
B. Bertrand: CEA, LETI, Minatec Campus
M. Vinet: CEA, LETI, Minatec Campus
M. Urdampilleta: University of Grenoble Alpes
T. Meunier: University of Grenoble Alpes
M. Sanquer: University of Grenoble Alpes
X. Jehl: University of Grenoble Alpes
R. Maurand: University of Grenoble Alpes
S. Franceschi: University of Grenoble Alpes

Nature Communications, 2019, vol. 10, issue 1, 1-6

Abstract: Abstract Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1 K.

Date: 2019
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DOI: 10.1038/s41467-019-10848-z

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