Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons

Weinan Lin, Lei Li, Fatih Doğan, Changjian Li, Hélène Rotella, Xiaojiang Yu, Bangmin Zhang, Yangyang Li, Wen Siang Lew, Shijie Wang, Wilfrid Prellier, Stephen J. Pennycook, Jingsheng Chen (), Zhicheng Zhong (), Aurelien Manchon () and Tom Wu ()
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Weinan Lin: National University of Singapore
Lei Li: Chinese Academy of Sciences
Fatih Doğan: American University of the Middle East
Changjian Li: National University of Singapore
Hélène Rotella: CNRS UMR 6508
Xiaojiang Yu: National University of Singapore
Bangmin Zhang: National University of Singapore
Yangyang Li: National University of Singapore
Wen Siang Lew: Nanyang Technological University
Shijie Wang: Institute of Materials Research and Engineering
Wilfrid Prellier: CNRS UMR 6508
Stephen J. Pennycook: National University of Singapore
Jingsheng Chen: National University of Singapore
Zhicheng Zhong: Chinese Academy of Sciences
Aurelien Manchon: King Abdullah University of Science and Technology
Tom Wu: University of New South Wales (UNSW)

Nature Communications, 2019, vol. 10, issue 1, 1-7

Abstract: Abstract The Rashba effect plays important roles in emerging quantum materials physics and potential spintronic applications, entailing both the spin orbit interaction (SOI) and broken inversion symmetry. In this work, we devise asymmetric oxide heterostructures of LaAlO3//SrTiO3/LaAlO3 (LAO//STO/LAO) to study the Rashba effect in STO with an initial centrosymmetric structure, and broken inversion symmetry is created by the inequivalent bottom and top interfaces due to their opposite polar discontinuities. Furthermore, we report the observation of a transition from the cubic Rashba effect to the coexistence of linear and cubic Rashba effects in the oxide heterostructures, which is controlled by the filling of Ti orbitals. Such asymmetric oxide heterostructures with initially centrosymmetric materials provide a general strategy for tuning the Rashba SOI in artificial quantum materials.

Date: 2019
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DOI: 10.1038/s41467-019-10961-z

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