Understanding memristive switching via in situ characterization and device modeling

Wen Sun, Bin Gao, Miaofang Chi, Qiangfei Xia (), J. Joshua Yang (), He Qian and Huaqiang Wu ()
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Wen Sun: Institute of Microelectronics, Tsinghua University
Bin Gao: Institute of Microelectronics, Tsinghua University
Miaofang Chi: Oak Ridge National Laboratory
Qiangfei Xia: University of Massachusetts
J. Joshua Yang: University of Massachusetts
He Qian: Institute of Microelectronics, Tsinghua University
Huaqiang Wu: Institute of Microelectronics, Tsinghua University

Nature Communications, 2019, vol. 10, issue 1, 1-13

Abstract: Abstract Owing to their attractive application potentials in both non-volatile memory and unconventional computing, memristive devices have drawn substantial research attention in the last decade. However, major roadblocks still remain in device performance, especially concerning relatively large parameter variability and limited cycling endurance. The response of the active region in the device within and between switching cycles plays the dominating role, yet the microscopic details remain elusive. This Review summarizes recent progress in scientific understanding of the physical origins of the non-idealities and propose a synergistic approach based on in situ characterization and device modeling to investigate switching mechanism. At last, the Review offers an outlook for commercialization viability of memristive technology.

Date: 2019
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DOI: 10.1038/s41467-019-11411-6

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